Deliver to
United Kingdom
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK39J60W5,S1VQ. The FET features of the product include super junction. It has typical 16 weeks of manufacturer standard lead time. It features n-channel 600v 38.8a (ta) 270w (tc) through hole to-3p(n). The typical Vgs (th) (max) of the product is 3.7v @ 1.9ma. Furthermore, the product is active The product has 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 135nc @ 10v. It has a maximum Rds On and voltage of 65 mohm @ 19.4a, 10v. It carries FET type n-channel. It is available in the standard package of 25. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 600v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 4100pf @ 300v. The product is available in through hole configuration. The product dtmosiv, is a highly preferred choice for users. to-3p(n) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 38.8a (ta). The product carries maximum power dissipation 270w (tc). This product use mosfet (metal oxide) technology. Alternative Names include tk39j60w5,s1vq(o tk39j60w5s1vq.
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