Deliver to
United Kingdom
This is manufactured by Vishay Siliconix. The manufacturer part number is SIHG33N65E-GE3. It has typical 20 weeks of manufacturer standard lead time. It features n-channel 650v 32.4a (tc) 313w (tc) through hole to-247ac. The typical Vgs (th) (max) of the product is 4v @ 250µa. Furthermore, the product is active The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 173nc @ 10v. It has a maximum Rds On and voltage of 105 mohm @ 16.5a, 10v. It carries FET type n-channel. It is available in the standard package of 1. The vishay siliconix's product offers user-desired applications. The product has a 650v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 4040pf @ 100v. The product is available in through hole configuration. to-247ac is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 32.4a (tc). The product carries maximum power dissipation 313w (tc). This product use mosfet (metal oxide) technology. Alternative Names include sihg33n65e-ge3ct.
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