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United Kingdom
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK3R1A04PL,S4X. It has typical 16 weeks of manufacturer standard lead time. It features n-channel 40v 82a (tc) 36w (tc) through hole to-220sis. The typical Vgs (th) (max) of the product is 2.4v @ 500µa. Furthermore, the product is active The product has 175°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 63.4nc @ 10v. It has a maximum Rds On and voltage of 3.8 mohm @ 30a, 4.5v. It carries FET type n-channel. It is available in the standard package of 50. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 40v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 4670pf @ 20v. The product is available in through hole configuration. The product u-mosix-h, is a highly preferred choice for users. to-220sis is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 82a (tc). The product carries maximum power dissipation 36w (tc). This product use mosfet (metal oxide) technology. Alternative Names include tk3r1a04pl,s4x(s tk3r1a04pls4x.
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