SSM3K329R-LF Toshiba Semiconductor and Storage SSM3K329R,LF

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3K329R,LF. It has typical 18 weeks of manufacturer standard lead time. It features n-channel 30v 3.5a (ta) 1w (ta) surface mount sot-23f. The typical Vgs (th) (max) of the product is 1v @ 1ma. Furthermore, the product is active The product has 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 1.5nc @ 4v. It has a maximum Rds On and voltage of 126 mohm @ 1a, 4v. It carries FET type n-channel. It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±12v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 123pf @ 15v. The product is available in surface mount configuration. The product u-mosiii, is a highly preferred choice for users. sot-23f is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 3.5a (ta). The product carries maximum power dissipation 1w (ta). This product use mosfet (metal oxide) technology. Alternative Names include ssm3k329rlfct.

RoHs Compliant

Toshiba Semiconductor and Storage SSM3K329R,LF

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
SSM3K329R,LF
Enrgtech Part No:
ET11751533
Warranty:
Manufacturer
£ 0.44
Checking for live stock
Manufacturer Standard Lead Time:
18 Weeks
Detailed Description:
N-Channel 30V 3.5A (Ta) 1W (Ta) Surface Mount SOT-23F
Vgs(th) (Max) @ Id:
1V @ 1mA
Part Status:
Active
Operating Temperature:
150°C (TJ)
Package / Case:
SOT-23-3 Flat Leads
Gate Charge (Qg) (Max) @ Vgs:
1.5nC @ 4V
Rds On (Max) @ Id, Vgs:
126 mOhm @ 1A, 4V
FET Type:
N-Channel
Standard Package:
1
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
123pF @ 15V
Mounting Type:
Surface Mount
Series:
U-MOSIII
Supplier Device Package:
SOT-23F
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
3.5A (Ta)
Power Dissipation (Max):
1W (Ta)
Technology:
MOSFET (Metal Oxide)
Other Names:
SSM3K329RLFCT


Alternative products


Product Reviews