TK72A08N1-S4X-S Toshiba Semiconductor and Storage TK72A08N1,S4X(S
TK72A08N1-S4X-S Toshiba Semiconductor and Storage TK72A08N1,S4X(S
TK72A08N1-S4X-S Toshiba Semiconductor and Storage TK72A08N1,S4X(S
TK72A08N1-S4X-S Toshiba Semiconductor and Storage TK72A08N1,S4X(S

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK72A08N1,S4X(S. The typical Vgs (th) (max) of the product is 4v @ 1ma. Furthermore, the product is active The product has 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 175nc @ 10v. It has a maximum Rds On and voltage of 4.5 mohm @ 40a, 10v. It carries FET type n-channel. It is available in the standard package of 500. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 75v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 8200pf @ 10v. The product is available in through hole configuration. The product u-mosviii-h, is a highly preferred choice for users. to-220sis is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 80a (ta). The product carries maximum power dissipation 45w (tc). This product use mosfet (metal oxide) technology.

RoHs Compliant

Toshiba Semiconductor and Storage TK72A08N1,S4X(S

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
TK72A08N1,S4X(S
Enrgtech Part No:
ET11765657
Warranty:
Manufacturer
£ 1.98
Checking for live stock
Vgs(th) (Max) @ Id:
4V @ 1mA
Part Status:
Active
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
175nC @ 10V
Rds On (Max) @ Id, Vgs:
4.5 mOhm @ 40A, 10V
FET Type:
N-Channel
Standard Package:
500
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
75V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
8200pF @ 10V
Mounting Type:
Through Hole
Series:
U-MOSVIII-H
Supplier Device Package:
TO-220SIS
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
80A (Ta)
Power Dissipation (Max):
45W (Tc)
Technology:
MOSFET (Metal Oxide)
pdf icon
1393 (UK2011-EN PDF)(Catalog Page)


Alternative products


Product Reviews