SSM3K56CT-L3F Toshiba Semiconductor and Storage SSM3K56CT,L3F

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3K56CT,L3F. It has typical 12 weeks of manufacturer standard lead time. It features n-channel 20v 800ma (ta) 500mw (ta) surface mount cst3. The typical Vgs (th) (max) of the product is 1v @ 1ma. Furthermore, the product is active The product has 150°c (ta) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 1nc @ 4.5v. It has a maximum Rds On and voltage of 235 mohm @ 800ma, 4.5v. It carries FET type n-channel. It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±8v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 55pf @ 10v. The product is available in surface mount configuration. The product u-mosvii-h, is a highly preferred choice for users. cst3 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 800ma (ta). The product carries maximum power dissipation 500mw (ta). This product use mosfet (metal oxide) technology. Alternative Names include ssm3k56ctl3fct.

RoHs Compliant

Toshiba Semiconductor and Storage SSM3K56CT,L3F

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
SSM3K56CT,L3F
Enrgtech Part No:
ET11804835
Warranty:
Manufacturer
£ 0.48
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Manufacturer Standard Lead Time:
12 Weeks
Detailed Description:
N-Channel 20V 800mA (Ta) 500mW (Ta) Surface Mount CST3
Vgs(th) (Max) @ Id:
1V @ 1mA
Part Status:
Active
Operating Temperature:
150°C (TA)
Package / Case:
3-XFDFN
Gate Charge (Qg) (Max) @ Vgs:
1nC @ 4.5V
Rds On (Max) @ Id, Vgs:
235 mOhm @ 800mA, 4.5V
FET Type:
N-Channel
Standard Package:
1
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
55pF @ 10V
Mounting Type:
Surface Mount
Series:
U-MOSVII-H
Supplier Device Package:
CST3
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
800mA (Ta)
Power Dissipation (Max):
500mW (Ta)
Technology:
MOSFET (Metal Oxide)
Other Names:
SSM3K56CTL3FCT


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