Deliver to
United Kingdom
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK10A60W,S4VX. The FET features of the product include super junction. It has typical 16 weeks of manufacturer standard lead time. It features n-channel 600v 9.7a (ta) 30w (tc) through hole to-220sis. The typical Vgs (th) (max) of the product is 3.7v @ 500µa. Furthermore, the product is active The product has 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 20nc @ 10v. It has a maximum Rds On and voltage of 380 mohm @ 4.9a, 10v. It carries FET type n-channel. It is available in the standard package of 50. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 600v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 700pf @ 300v. The product is available in through hole configuration. The product dtmosiv, is a highly preferred choice for users. to-220sis is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 9.7a (ta). The product carries maximum power dissipation 30w (tc). This product use mosfet (metal oxide) technology. Alternative Names include tk10a60w,s4vx(m tk10a60ws4vx.
Basket Total:
£ 0
We don't have this product in stock at the moment. Our maximum lead time can extend to two weeks.
We will keep you informed about the delivery status and shipment date once you have placed your order.
