SSM6H19NU-LF Toshiba Semiconductor and Storage SSM6H19NU,LF

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6H19NU,LF. It has typical 12 weeks of manufacturer standard lead time. It features n-channel 40v 2a (ta) 1w (ta) surface mount 6-udfn (2x2). The typical Vgs (th) (max) of the product is 1.2v @ 1ma. Furthermore, the product is active The product has 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 2.2nc @ 4.2v. It has a maximum Rds On and voltage of 185 mohm @ 1a, 8v. It carries FET type n-channel. It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 40v drain to source voltage. The maximum Vgs rate is ±12v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 130pf @ 10v. The product is available in surface mount configuration. The product u-mosvii-h, is a highly preferred choice for users. 6-udfn (2x2) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 2a (ta). The product carries maximum power dissipation 1w (ta). This product use mosfet (metal oxide) technology. Alternative Names include ssm6h19nulfct.

RoHs Compliant

Toshiba Semiconductor and Storage SSM6H19NU,LF

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
SSM6H19NU,LF
Enrgtech Part No:
ET11885391
Warranty:
Manufacturer
£ 0.37
Checking for live stock
Manufacturer Standard Lead Time:
12 Weeks
Detailed Description:
N-Channel 40V 2A (Ta) 1W (Ta) Surface Mount 6-UDFN (2x2)
Vgs(th) (Max) @ Id:
1.2V @ 1mA
Part Status:
Active
Operating Temperature:
150°C (TJ)
Package / Case:
6-UDFN Exposed Pad
Gate Charge (Qg) (Max) @ Vgs:
2.2nC @ 4.2V
Rds On (Max) @ Id, Vgs:
185 mOhm @ 1A, 8V
FET Type:
N-Channel
Standard Package:
1
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
130pF @ 10V
Mounting Type:
Surface Mount
Series:
U-MOSVII-H
Supplier Device Package:
6-UDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 8V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
2A (Ta)
Power Dissipation (Max):
1W (Ta)
Technology:
MOSFET (Metal Oxide)
Other Names:
SSM6H19NULFCT


Alternative products


Product Reviews