TK40A06N1-S4X Toshiba Semiconductor and Storage TK40A06N1,S4X
TK40A06N1-S4X Toshiba Semiconductor and Storage TK40A06N1,S4X

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK40A06N1,S4X. It has typical 16 weeks of manufacturer standard lead time. It features n-channel 60v 40a (tc) 30w (tc) through hole to-220sis. The typical Vgs (th) (max) of the product is 4v @ 300µa. Furthermore, the product is active The product has 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 23nc @ 10v. It has a maximum Rds On and voltage of 10.4 mohm @ 20a, 10v. It carries FET type n-channel. It is available in the standard package of 50. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1700pf @ 30v. The product is available in through hole configuration. The product u-mosviii-h, is a highly preferred choice for users. to-220sis is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 40a (tc). The product carries maximum power dissipation 30w (tc). This product use mosfet (metal oxide) technology. Alternative Names include tk40a06n1,s4x(s tk40a06n1,s4x-nd tk40a06n1s4x.

RoHs Compliant

Toshiba Semiconductor and Storage TK40A06N1,S4X

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
TK40A06N1,S4X
Enrgtech Part No:
ET11937585
Warranty:
Manufacturer
£ 0.88
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Manufacturer Standard Lead Time:
16 Weeks
Detailed Description:
N-Channel 60V 40A (Tc) 30W (Tc) Through Hole TO-220SIS
Vgs(th) (Max) @ Id:
4V @ 300µA
Part Status:
Active
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
23nC @ 10V
Rds On (Max) @ Id, Vgs:
10.4 mOhm @ 20A, 10V
FET Type:
N-Channel
Standard Package:
50
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1700pF @ 30V
Mounting Type:
Through Hole
Series:
U-MOSVIII-H
Supplier Device Package:
TO-220SIS
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
40A (Tc)
Power Dissipation (Max):
30W (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
TK40A06N1,S4X(S TK40A06N1,S4X-ND TK40A06N1S4X


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