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TK10E60W-S1VX Toshiba Semiconductor and Storage TK10E60W,S1VX
TK10E60W-S1VX Toshiba Semiconductor and Storage TK10E60W,S1VX

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK10E60W,S1VX. The FET features of the product include super junction. It has typical 16 weeks of manufacturer standard lead time. It features n-channel 600v 9.7a (ta) 100w (tc) through hole to-220. The typical Vgs (th) (max) of the product is 3.7v @ 500µa. Furthermore, the product is active The product has 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 20nc @ 10v. It has a maximum Rds On and voltage of 380 mohm @ 4.9a, 10v. It carries FET type n-channel. It is available in the standard package of 50. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 600v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 700pf @ 300v. The product is available in through hole configuration. The product dtmosiv, is a highly preferred choice for users. to-220 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 9.7a (ta). The product carries maximum power dissipation 100w (tc). This product use mosfet (metal oxide) technology. Alternative Names include tk10e60w,s1vx(s tk10e60ws1vx.

RoHs Compliant

Toshiba Semiconductor and Storage TK10E60W,S1VX

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
TK10E60W,S1VX
Enrgtech Part No:
ET11956272
Warranty:
Manufacturer
£ 2.53
Checking for live stock
FET Feature:
Super Junction
Manufacturer Standard Lead Time:
16 Weeks
Detailed Description:
N-Channel 600V 9.7A (Ta) 100W (Tc) Through Hole TO-220
Vgs(th) (Max) @ Id:
3.7V @ 500µA
Part Status:
Active
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
20nC @ 10V
Rds On (Max) @ Id, Vgs:
380 mOhm @ 4.9A, 10V
FET Type:
N-Channel
Standard Package:
50
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
700pF @ 300V
Mounting Type:
Through Hole
Series:
DTMOSIV
Supplier Device Package:
TO-220
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
9.7A (Ta)
Power Dissipation (Max):
100W (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
TK10E60W,S1VX(S TK10E60WS1VX
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