TK28A65W-S5X Toshiba Semiconductor and Storage TK28A65W,S5X
TK28A65W-S5X Toshiba Semiconductor and Storage TK28A65W,S5X

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK28A65W,S5X. It has typical 12 weeks of manufacturer standard lead time. It features n-channel 650v 27.6a (ta) 45w (tc) through hole to-220sis. The typical Vgs (th) (max) of the product is 3.5v @ 1.6ma. Furthermore, the product is active The product has 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 75nc @ 10v. It has a maximum Rds On and voltage of 110 mohm @ 13.8a, 10v. It carries FET type n-channel. It is available in the standard package of 50. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 650v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 3000pf @ 300v. The product is available in through hole configuration. The product dtmosiv, is a highly preferred choice for users. to-220sis is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 27.6a (ta). The product carries maximum power dissipation 45w (tc). This product use mosfet (metal oxide) technology. Alternative Names include tk28a65w,s5x(m tk28a65ws5x.

RoHs Compliant

Toshiba Semiconductor and Storage TK28A65W,S5X

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
TK28A65W,S5X
Enrgtech Part No:
ET11985258
Warranty:
Manufacturer
£ 4.57
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Manufacturer Standard Lead Time:
12 Weeks
Detailed Description:
N-Channel 650V 27.6A (Ta) 45W (Tc) Through Hole TO-220SIS
Vgs(th) (Max) @ Id:
3.5V @ 1.6mA
Part Status:
Active
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
75nC @ 10V
Rds On (Max) @ Id, Vgs:
110 mOhm @ 13.8A, 10V
FET Type:
N-Channel
Standard Package:
50
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
650V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
3000pF @ 300V
Mounting Type:
Through Hole
Series:
DTMOSIV
Supplier Device Package:
TO-220SIS
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
27.6A (Ta)
Power Dissipation (Max):
45W (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
TK28A65W,S5X(M TK28A65WS5X


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