TPC6111-TE85L-F-M- Toshiba Semiconductor and Storage TPC6111(TE85L,F,M)
TPC6111-TE85L-F-M- Toshiba Semiconductor and Storage TPC6111(TE85L,F,M)
TPC6111-TE85L-F-M- Toshiba Semiconductor and Storage TPC6111(TE85L,F,M)

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPC6111(TE85L,F,M). It has typical 12 weeks of manufacturer standard lead time. It features p-channel 20v 5.5a (ta) 700mw (ta) surface mount vs-6 (2.9x2.8). The typical Vgs (th) (max) of the product is 1v @ 1ma. Furthermore, the product is active The product has 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 10nc @ 5v. It has a maximum Rds On and voltage of 40 mohm @ 2.8a, 4.5v. It carries FET type p-channel. It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±8v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 700pf @ 10v. The product is available in surface mount configuration. The product u-mosv, is a highly preferred choice for users. vs-6 (2.9x2.8) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 5.5a (ta). The product carries maximum power dissipation 700mw (ta). This product use mosfet (metal oxide) technology. Alternative Names include tpc6111(te85lfm)ct tpc6111te85lfct tpc6111te85lfct-nd.

RoHs Compliant

Toshiba Semiconductor and Storage TPC6111(TE85L,F,M)

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
TPC6111(TE85L,F,M)
Enrgtech Part No:
ET12012589
Warranty:
Manufacturer
£ 0.65
Checking for live stock
Manufacturer Standard Lead Time:
12 Weeks
Detailed Description:
P-Channel 20V 5.5A (Ta) 700mW (Ta) Surface Mount VS-6 (2.9x2.8)
Vgs(th) (Max) @ Id:
1V @ 1mA
Part Status:
Active
Operating Temperature:
150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Gate Charge (Qg) (Max) @ Vgs:
10nC @ 5V
Rds On (Max) @ Id, Vgs:
40 mOhm @ 2.8A, 4.5V
FET Type:
P-Channel
Standard Package:
1
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
700pF @ 10V
Mounting Type:
Surface Mount
Series:
U-MOSV
Supplier Device Package:
VS-6 (2.9x2.8)
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
5.5A (Ta)
Power Dissipation (Max):
700mW (Ta)
Technology:
MOSFET (Metal Oxide)
Other Names:
TPC6111(TE85LFM)CT TPC6111TE85LFCT TPC6111TE85LFCT-ND
pdf icon
Mosfets Prod Guide(Datasheets)
pdf icon
1393 (UK2011-EN PDF)(Catalog Page)


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