SSM3J46CTB-TPL3- Toshiba Semiconductor and Storage SSM3J46CTB(TPL3)
SSM3J46CTB-TPL3- Toshiba Semiconductor and Storage SSM3J46CTB(TPL3)
SSM3J46CTB-TPL3- Toshiba Semiconductor and Storage SSM3J46CTB(TPL3)
SSM3J46CTB-TPL3- Toshiba Semiconductor and Storage SSM3J46CTB(TPL3)

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3J46CTB(TPL3). It has typical 11 weeks of manufacturer standard lead time. It features p-channel 20v 2a (ta) surface mount cst3b. The typical Vgs (th) (max) of the product is 1v @ 1ma. Furthermore, the product is active The product has 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 4.7nc @ 4.5v. It has a maximum Rds On and voltage of 103 mohm @ 1.5a, 4.5v. It carries FET type p-channel. It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±8v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 290pf @ 10v. The product is available in surface mount configuration. The product u-mosvi, is a highly preferred choice for users. cst3b is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 2a (ta). This product use mosfet (metal oxide) technology. Alternative Names include ssm3j46ctb(tpl3)ct.

RoHs Compliant

Toshiba Semiconductor and Storage SSM3J46CTB(TPL3)

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
SSM3J46CTB(TPL3)
Enrgtech Part No:
ET12025891
Warranty:
Manufacturer
£ 0.44
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Manufacturer Standard Lead Time:
11 Weeks
Detailed Description:
P-Channel 20V 2A (Ta) Surface Mount CST3B
Vgs(th) (Max) @ Id:
1V @ 1mA
Part Status:
Active
Operating Temperature:
150°C (TJ)
Package / Case:
3-SMD, No Lead
Gate Charge (Qg) (Max) @ Vgs:
4.7nC @ 4.5V
Rds On (Max) @ Id, Vgs:
103 mOhm @ 1.5A, 4.5V
FET Type:
P-Channel
Standard Package:
1
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
290pF @ 10V
Mounting Type:
Surface Mount
Series:
U-MOSVI
Supplier Device Package:
CST3B
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
2A (Ta)
Technology:
MOSFET (Metal Oxide)
Other Names:
SSM3J46CTB(TPL3)CT
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Mosfets Prod Guide(Datasheets)


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