SSM5N16FUTE85LF Toshiba Semiconductor and Storage

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM5N16FUTE85LF. It features n-channel 20v 100ma (ta) 200mw (ta) surface mount usv. Furthermore, the product is discontinued at digi-key The product has 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. It has a maximum Rds On and voltage of 3 ohm @ 10ma, 4v. It carries FET type n-channel. It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±10v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 9.3pf @ 3v. The product is available in surface mount configuration. The product π-mosvi, is a highly preferred choice for users. usv is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 100ma (ta). The product carries maximum power dissipation 200mw (ta). This product use mosfet (metal oxide) technology. Alternative Names include ssm5n16fute85lfct.

RoHs Compliant

Toshiba Semiconductor and Storage SSM5N16FUTE85LF

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
SSM5N16FUTE85LF
Enrgtech Part No:
ET12088280
Warranty:
Manufacturer
£ 0.41
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Detailed Description:
N-Channel 20V 100mA (Ta) 200mW (Ta) Surface Mount USV
Part Status:
Discontinued at Digi-Key
Operating Temperature:
150°C (TJ)
Package / Case:
5-TSSOP, SC-70-5, SOT-353
Rds On (Max) @ Id, Vgs:
3 Ohm @ 10mA, 4V
FET Type:
N-Channel
Standard Package:
1
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±10V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
9.3pF @ 3V
Mounting Type:
Surface Mount
Series:
π-MOSVI
Supplier Device Package:
USV
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
100mA (Ta)
Power Dissipation (Max):
200mW (Ta)
Technology:
MOSFET (Metal Oxide)
Other Names:
SSM5N16FUTE85LFCT


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