Deliver to
United Kingdom
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPN2010FNH,L1Q. It has typical 12 weeks of manufacturer standard lead time. It features n-channel 250v 5.6a (ta) 700mw (ta), 39w (tc) surface mount 8-tson advance (3.3x3.3). The typical Vgs (th) (max) of the product is 4v @ 200µa. Furthermore, the product is active The product has 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 7nc @ 10v. It has a maximum Rds On and voltage of 198 mohm @ 2.8a, 10v. It carries FET type n-channel. It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 250v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 600pf @ 100v. The product is available in surface mount configuration. The product u-mosviii-h, is a highly preferred choice for users. 8-tson advance (3.3x3.3) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 5.6a (ta). The product carries maximum power dissipation 700mw (ta), 39w (tc). This product use mosfet (metal oxide) technology. Alternative Names include tpn2010fnhl1qct.
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