IXFH26N50 IXYS
IXFH26N50 IXYS

This is manufactured by IXYS. The manufacturer part number is IXFH26N50. It features n-channel 500v 26a (tc) 300w (tc) through hole to-247ad (ixfh). The typical Vgs (th) (max) of the product is 4v @ 4ma. Furthermore, the product is active The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 160nc @ 10v. It has a maximum Rds On and voltage of 200 mohm @ 13a, 10v. It carries FET type n-channel. It is available in the standard package of 30. The ixys's product offers user-desired applications. The product has a 500v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 4200pf @ 25v. The product is available in through hole configuration. The product hiperfet™, is a highly preferred choice for users. to-247ad (ixfh) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 26a (tc). The product carries maximum power dissipation 300w (tc). This product use mosfet (metal oxide) technology.

RoHs Compliant

IXYS IXFH26N50

Manufacturer:
IXYS
Manufacturer Part No:
IXFH26N50
Enrgtech Part No:
ET12165082
Warranty:
Manufacturer
£ 9.02
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Detailed Description:
N-Channel 500V 26A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)
Vgs(th) (Max) @ Id:
4V @ 4mA
Part Status:
Active
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
160nC @ 10V
Rds On (Max) @ Id, Vgs:
200 mOhm @ 13A, 10V
FET Type:
N-Channel
Standard Package:
30
Manufacturer:
IXYS
Drain to Source Voltage (Vdss):
500V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4200pF @ 25V
Mounting Type:
Through Hole
Series:
HiPerFET™
Supplier Device Package:
TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
26A (Tc)
Power Dissipation (Max):
300W (Tc)
Technology:
MOSFET (Metal Oxide)
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IXFx2xN50(Datasheets)


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