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United Kingdom
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK17E65W,S1X. It features n-channel 650v 17.3a (ta) 165w (tc) through hole to-220. The typical Vgs (th) (max) of the product is 3.5v @ 900µa. Furthermore, the product is active The product has 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 45nc @ 10v. It has a maximum Rds On and voltage of 200 mohm @ 8.7a, 10v. It carries FET type n-channel. It is available in the standard package of 50. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 650v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1800pf @ 300v. The product is available in through hole configuration. The product dtmosiv, is a highly preferred choice for users. to-220 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 17.3a (ta). The product carries maximum power dissipation 165w (tc). This product use mosfet (metal oxide) technology. Alternative Names include tk17e65w,s1x(s tk17e65ws1x.
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