DMN65D8L-7 Diodes Incorporated

This is manufactured by Diodes Incorporated. The manufacturer part number is DMN65D8L-7. It has typical 14 weeks of manufacturer standard lead time. It has a maximum Rds On and voltage of 3ohm @ 115ma, 10v. It features n-channel 60v 310ma (ta) 370mw (ta) surface mount sot-23. The product's input capacitance at maximum includes 22pf @ 25v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2v @ 250µa. Furthermore, the product is active The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 0.87nc @ 10v. sot-23 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in [Package/ Case]. The product carries maximum power dissipation 370mw (ta). The continuous current drain at 25°C is 310ma (ta). This product use mosfet (metal oxide) technology. The diodes incorporated's product offers user-desired applications.

Diodes Incorporated DMN65D8L-7

Manufacturer:
Diodes Incorporated
Manufacturer Part No:
DMN65D8L-7
Enrgtech Part No:
ET20133258
Warranty:
Manufacturer
£ 0.15
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Manufacturer Standard Lead Time:
14 Weeks
Rds On (Max) @ Id, Vgs:
3Ohm @ 115mA, 10V
Detailed Description:
N-Channel 60V 310mA (Ta) 370mW (Ta) Surface Mount SOT-23
Input Capacitance (Ciss) (Max) @ Vds:
22pF @ 25V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2V @ 250µA
Part Status:
Active
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
0.87nC @ 10V
Supplier Device Package:
SOT-23
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Package / Case:
TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max):
370mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
310mA (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Diodes Incorporated
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Mult Dev Alt Wafer Source 26/Apr/2018(PCN Assembly/Origin)
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DMN65D8L(Datasheets)
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Diodes RoHS 3 Cert(Environmental Information)


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