FDN359AN ON Semiconductor

This is manufactured by ON Semiconductor. The manufacturer part number is FDN359AN. It has typical 5 weeks of manufacturer standard lead time. It has a maximum Rds On and voltage of 46mohm @ 2.7a, 10v. It features n-channel 30v 2.7a (ta) 500mw (ta) surface mount supersot-3. The product's input capacitance at maximum includes 480pf @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 3v @ 250µa. Furthermore, the product is active The product powertrench®, is a highly preferred choice for users. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 7nc @ 5v. supersot-3 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in [Package/ Case]. The product carries maximum power dissipation 500mw (ta). The product has a 30v drain to source voltage. The continuous current drain at 25°C is 2.7a (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

ON Semiconductor FDN359AN

Manufacturer:
ON Semiconductor
Manufacturer Part No:
FDN359AN
Enrgtech Part No:
ET20133298
Warranty:
Manufacturer
£ 0.52
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Manufacturer Standard Lead Time:
5 Weeks
Rds On (Max) @ Id, Vgs:
46mOhm @ 2.7A, 10V
Detailed Description:
N-Channel 30V 2.7A (Ta) 500mW (Ta) Surface Mount SuperSOT-3
Input Capacitance (Ciss) (Max) @ Vds:
480pF @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Part Status:
Active
Series:
PowerTrench®
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
7nC @ 5V
Supplier Device Package:
SuperSOT-3
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Package / Case:
TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max):
500mW (Ta)
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
2.7A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
pdf icon
Mult Dev Assembly/Test Add 8/Jul/2019(PCN Assembly/Origin)
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Mold Compound 08/April/2008(PCN Design/Specification)
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Wire Bonding 07/Nov/2008(PCN Design/Specification)
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FDN359AN(Datasheets)
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Binary Year Code Marking 15/Jan/2014(PCN Packaging)
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Mult Devices 24/Oct/2017(PCN Packaging)


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