128-Kbit ferroelectric random access memory (F-RAM)
logically organized as 16K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
■ Fast two-wire serial interface (I
2C)
Up to 3.4-MHz frequency[1]
Direct hardware replacement for serial EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Device ID
Manufacturer ID and Product ID
Low power consumption
175-A active current at 100 kHz
150-A standby current
8-A sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
8-pin small outline integrated circuit (SOIC) package