4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast 2-wire Serial interface (I2C)
Up to 1-MHz frequency
Direct hardware replacement for serial (I2C) EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Low power consumption
100 A active current at 100 kHz
3 A (typ) standby current
Voltage operation: VDD = 2.7 V to 3.65 V
Industrial temperature: –40 C to +85 C
8-pin small outline integrated circuit (SOIC) package