Infineon OptiMOS™ -T2 Dual Silicon N-Channel MOSFET, 20 A, 40 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N04S412AATMA1

For more information please check the datasheets.

Infineon OptiMOS™ -T2 Dual Silicon N-Channel MOSFET, 20 A, 40 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N04S412AATMA1

Manufacturer:

Infineon

Manufacturer Part No:

IPG20N04S412AATMA1

Enrgtech Part No:

ET100031981

Warranty:

Manufacturer

£ 0.6600

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Channel Type:

Maximum Continuous Drain Current:

20 A

Maximum Drain Source Voltage:

40 V

Series:

OptiMOS™ -T2

Package Type:

SuperSO8 5 x 6 Dual

Mounting Type:

Surface Mount

Pin Count:

Maximum Drain Source Resistance:

0.01219 Ω

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

Number of Elements per Chip:

Transistor Material:

Silicon

A700000008114262.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Infineon OptiMOS™ -T2 Dual Silicon N-Channel MOSFET, 20 A, 40 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N04S412AATMA1

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