onsemi PowerTrench P-Channel MOSFET, 6.7 A, 12 V, 3-Pin DPAK FDD306P

onsemi PowerTrench P-Channel MOSFET, 6.7 A, 12 V, 3-Pin DPAK FDD306P

Manufacturer:
Manufacturer Part No:
FDD306P
Enrgtech Part No:
ET100032450
Warranty:
Manufacturer
£ 0.2300
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Channel Type:
P
Maximum Continuous Drain Current:
6.7 A
Maximum Drain Source Voltage:
12 V
Package Type:
DPAK (TO-252)
Series:
PowerTrench
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
90 mΩ
Channel Mode:
Enhancement
Minimum Gate Threshold Voltage:
0.4V
Maximum Power Dissipation:
52 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
-8 V, +8 V
Typical Gate Charge @ Vgs:
15 nC @ 4.5 V
Transistor Material:
Si
Width:
6.22mm
Number of Elements per Chip:
1
Maximum Operating Temperature:
+175 °C
Length:
6.73mm
Minimum Operating Temperature:
-55 °C
Height:
2.39mm
pdf icon
0900766b810c9606.pdf(datasheets)
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0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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