Infineon CoolMOS™ Dual Silicon N-Channel MOSFET, 20 A, 100 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N10S4L22ATMA1

Infineon CoolMOS™ Dual Silicon N-Channel MOSFET, 20 A, 100 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N10S4L22ATMA1

Manufacturer:
Manufacturer Part No:
IPG20N10S4L22ATMA1
Enrgtech Part No:
ET100033797
Warranty:
Manufacturer
£ 1.0200
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Channel Type:
N
Maximum Continuous Drain Current:
20 A
Maximum Drain Source Voltage:
100 V
Package Type:
SuperSO8 5 x 6 Dual
Series:
CoolMOS™
Mounting Type:
Surface Mount
Pin Count:
8
Maximum Drain Source Resistance:
0.022 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
2.1V
Transistor Material:
Silicon
Number of Elements per Chip:
2
pdf icon
A700000007835283.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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