Infineon HEXFET Dual N/P-Channel-Channel MOSFET, 3 A, 4 A, 30 V, 8-Pin SOIC IRF7309TRPBF

Infineon HEXFET Dual N/P-Channel-Channel MOSFET, 3 A, 4 A, 30 V, 8-Pin SOIC IRF7309TRPBF

Manufacturer:
Manufacturer Part No:
IRF7309TRPBF
Enrgtech Part No:
ET100033843
Warranty:
Manufacturer
£ 0.5100
Checking for live stock
Channel Type:
N, P
Maximum Continuous Drain Current:
3 A, 4 A
Maximum Drain Source Voltage:
30 V
Series:
HEXFET
Package Type:
SOIC
Mounting Type:
Surface Mount
Pin Count:
8
Maximum Drain Source Resistance:
80 mΩ, 160 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
1V
Minimum Gate Threshold Voltage:
1V
Maximum Power Dissipation:
1.4 W
Transistor Configuration:
Isolated
Maximum Gate Source Voltage:
-20 V, +20 V
Number of Elements per Chip:
2
Width:
4mm
Transistor Material:
Si
Length:
5mm
Typical Gate Charge @ Vgs:
25 nC @ 4.5 V
Maximum Operating Temperature:
+150 °C
Height:
1.5mm
Minimum Operating Temperature:
-55 °C
pdf icon
0900766b8132ef6d.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



Product Reviews