Infineon OptiMOS™ -T2 N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK IPD50N06S4L12ATMA2

For more information please check the datasheets.

Infineon OptiMOS™ -T2 N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK IPD50N06S4L12ATMA2

Manufacturer:

Infineon

Manufacturer Part No:

IPD50N06S4L12ATMA2

Enrgtech Part No:

ET100034049

Warranty:

Manufacturer

£ 0.5500

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Channel Type:

Maximum Continuous Drain Current:

50 A

Maximum Drain Source Voltage:

60 V

Package Type:

DPAK (TO-252)

Series:

OptiMOS™ -T2

Mounting Type:

Surface Mount

Pin Count:

Maximum Drain Source Resistance:

0.012 Ω

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

2.2V

Number of Elements per Chip:

Transistor Material:

A700000007584291.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Infineon OptiMOS™ -T2 N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK IPD50N06S4L12ATMA2

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