Infineon OptiMOS™ 3 N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC070N10NS3GATMA1

Infineon OptiMOS™ 3 N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC070N10NS3GATMA1

Manufacturer:
Manufacturer Part No:
BSC070N10NS3GATMA1
Enrgtech Part No:
ET100034157
Warranty:
Manufacturer
£ 0.8300
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Channel Type:
N
Maximum Continuous Drain Current:
100 A
Maximum Drain Source Voltage:
100 V
Package Type:
TDSON
Series:
OptiMOS™ 3
Mounting Type:
Surface Mount
Pin Count:
8
Maximum Drain Source Resistance:
8.6 mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation:
156 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
-20 V, +20 V
Typical Gate Charge @ Vgs:
63 nC @ 10 V
Maximum Operating Temperature:
+150 °C
Transistor Material:
Si
Number of Elements per Chip:
1
Length:
6.1mm
Width:
5.35mm
Height:
1.1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
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0900766b81478156.pdf(datasheets)
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0900766b8148a50d.pdf(datasheets)
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0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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