N-Channel MOSFET, 9.4 A, 100 V, 3-Pin DPAK IRFR120NTRLPBF

Channel Type:

N

Maximum Continuous Drain Current:

9.4 A

Maximum Drain Source Voltage:

100 V

Series:

HEXFET

Package Type:

DPAK (TO-252)

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

210 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4V

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

48 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Width:

6.22mm

Typical Gate Charge @ Vgs:

25 nC @ 10 V

Length:

6.73mm

Maximum Operating Temperature:

+175 °C

Number of Elements per Chip:

1

Transistor Material:

Si

Minimum Operating Temperature:

-55 °C

Height:

2.39mm