Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

onsemi N-Channel MOSFET, 115 mA, 60 V, 3-Pin SOT-23 2N7002

Manufacturer:
Manufacturer Part No:
2N7002
Enrgtech Part No:
ET14005311
Warranty:
Manufacturer
£ 0.0900
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Channel Type:
N
Maximum Continuous Drain Current:
115 mA
Maximum Drain Source Voltage:
60 V
Package Type:
SOT-23
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
7.5 Ω
Channel Mode:
Enhancement
Minimum Gate Threshold Voltage:
1V
Maximum Power Dissipation:
200 mW
Transistor Configuration:
Single
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Operating Temperature:
+150 °C
Number of Elements per Chip:
1
Width:
1.3mm
Transistor Material:
Si
Length:
2.92mm
Height:
0.93mm
Minimum Operating Temperature:
-55 °C
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Datasheet-74dd60ee(datasheets)
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ESD Control Selection Guide V1-3ead05ca(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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