Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

onsemi N-Channel MOSFET, 500 mA, 60 V, 3-Pin TO-92 BS170

Manufacturer:
Manufacturer Part No:
BS170
Enrgtech Part No:
ET16727170
Warranty:
Manufacturer
£ 0.1000
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Channel Type:
N
Maximum Continuous Drain Current:
500 mA
Maximum Drain Source Voltage:
60 V
Package Type:
TO-92
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
5 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
3V
Minimum Gate Threshold Voltage:
0.8V
Maximum Power Dissipation:
830 mW
Transistor Configuration:
Single
Maximum Gate Source Voltage:
-20 V, +20 V
Number of Elements per Chip:
1
Transistor Material:
Si
Length:
5.2mm
Maximum Operating Temperature:
+150 °C
Width:
4.19mm
Height:
5.33mm
Minimum Operating Temperature:
-55 °C
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Datasheet-a4712f0a(datasheets)
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ESD Control Selection Guide V1-3ead05ca(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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