onsemi P-Channel MOSFET, 6.6 A, 100 V, 3-Pin DPAK FQD8P10TM

onsemi P-Channel MOSFET, 6.6 A, 100 V, 3-Pin DPAK FQD8P10TM

Manufacturer:
Manufacturer Part No:
FQD8P10TM
Enrgtech Part No:
ET21470663
Warranty:
Manufacturer
£ 0.2400
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Channel Type:
P
Maximum Continuous Drain Current:
6.6 A
Maximum Drain Source Voltage:
100 V
Package Type:
DPAK (TO-252)
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
530 mΩ
Channel Mode:
Enhancement
Minimum Gate Threshold Voltage:
2V
Maximum Power Dissipation:
2.5 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
-30 V, +30 V
Width:
6.1mm
Number of Elements per Chip:
1
Length:
6.6mm
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
12 nC @ 10 V
Transistor Material:
Si
Minimum Operating Temperature:
-55 °C
Height:
2.3mm
pdf icon
0900766b80d246b1.pdf(datasheets)
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0900766b81644fb3.pdf(datasheets)
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A700000011364191.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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