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isc011n03l5satma1 Infineon OptiMOSTM Type N-Channel Power MOSFET, 100 A, 30 V Enhancement, 8-Pin PG-TDSON-8 ISC011N03L5SATMA1
isc011n03l5satma1 Infineon OptiMOSTM Type N-Channel Power MOSFET, 100 A, 30 V Enhancement, 8-Pin PG-TDSON-8 ISC011N03L5SATMA1

Infineon OptiMOSTM Type N-Channel Power MOSFET, 100 A, 30 V Enhancement, 8-Pin PG-TDSON-8 ISC011N03L5SATMA1

Infineon OptiMOSTM Type N-Channel Power MOSFET, 100 A, 30 V Enhancement, 8-Pin PG-TDSON-8 ISC011N03L5SATMA1

Manufacturer:
Infineon
Manufacturer Part No:
ISC011N03L5SATMA1
Enrgtech Part No:
ET26085919
Warranty:
Manufacturer
Pre-order

Estimated Delivery Time: 7-13 weeks

Each

Quantity
Unit Price (ex VAT)
5000
£ 0.35
Order Today!
From: United Kingdom

Estimated Delivery Time: 7-13 weeks

Series:
OptiMOSTM
Pin Count:
8
Mount Type:
Surface
Channel Mode:
Enhancement
Channel Type:
Type N
Package Type:
PG-TDSON-8
Product Type:
Power MOSFET
Forward Voltage Vf:
1V
Automotive Standard:
No
Standards/Approvals:
JEDEC, IEC61249-2-21, RoHS
Maximum Power Dissipation Pd:
96W
Typical Gate Charge Qg @ Vgs:
72nC
Maximum Operating Temperature:
150°C
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Drain Source Voltage Vds:
30V
Maximum Continuous Drain Current Id:
100A
Maximum Drain Source Resistance Rds:
1.1mΩ
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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