The Microchip's silicon carbide (SiC), power Schottky barrier diode (SBD) product line increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. The device is a 3300 V, 90 A SiC SBD in a two-lead T-MAX package. It has features like no reverse recovery, low forward voltage and low leakage current. High switching frequency and low switching losses
Low noise (EMI) switching and higher reliability systems